Method of fabricating semiconductor side wall fin

ABSTRACT

A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. Ser. No.09/691,353, filed on Oct. 18, 2000, the complete contents of which isincorporated herein by reference.

DESCRIPTION Background of the Invention

1. Field of the Invention

The present invention generally relates to providing a dual gate metaloxide semiconductor field effect transistor (MOSFET) transistor and,more particularly, to providing a dual gate MOSFET having relativelythin epitaxially grown channels.

2. Background Description

Field Effect Transistor (FET) structures may include a single gate (asingle channel) or a pair of gates, with double-gate versions providingthe advantage of enabling shorter channels and thus a faster device tobe produced. As gate lengths scale below 50 nm, FET scaling becomeslimited by the finite depth of the gate control. Research has shown thatplacing gates on multiple sides of an FET channel results in improvedFET performance in regard to short channel characteristics andoff-current characteristics. Placing gates on multiple sides of an FETchannel, provided the silicon is thin enough to be fully depleted,confines electric fields and charges much more tightly than in thestandard FET in which the fields are free to penetrate deeply into aneffectively infinite silicon substrate. The confinement possible with afully depleted dual gate structure allows improved short channel effectsand devices having gate lengths of 20-30 nm are possible. The inversioninduced channels will be formed on both sides of the silicon andpossibly across the entire channel which may increase saturationcurrent. Other reported benefits include nearly ideal subthresholdslope, increased saturation current and reduced short-channel andfloating body effects. Requirements generally are for a thin diffusionregion in the range of 5-50 nm, and gate lengths down to 20-100 nm, withthe gate length preferably being two to four times the diffusion length.

A number of horizontal double-gate FET structures, and particularly SOIdouble-gate FET structures, have been proposed. These structurestypically require a bottom gate formed beneath the thin silicon body inaddition to a conventional top gate. The fabrication of such structuresis difficult because the top and bottom gates must be aligned to atolerance beyond the accuracy of state of the art lithographicalequipment and methods, and because self-aligning techniques arefrustrated by the layers between the top and bottom gates.

In “Self-Aligned (Top and Bottom) Double-Gate MOSFET With a 25 nm ThickSilicon Channel”, by Hon Sum Philip et al., IEDM 97-427, IEEE 1997, adouble-gated MOSFET is considered the most promising candidate for aComplementary Metal Oxide Semiconductor (CMOS) scaled to the ultimatelimit of 20-30 nm gate length. Rigorous Monte Carlo device simulationsand analytical calculations predicted continual improvement in deviceperformance down to 20-30 nm gate length, provided the silicon channelthickness can be reduced to 10-25 nm and the gate oxide thickness isreduced to 2-3 nm. However, the alignment of the top and the bottom iscrucial to high performance because a mis-alignment will cause extragate to source/drain overlap capacitance as well as loss of currentdrive.

The following patents pertain to FETs, and particularly to thedouble-gated FETs.

U.S. Pat. No. 5,780,327, by Chu et al. and entitled “VerticalDouble-Gate Field Effect Transistor” describes a vertical double-gatefield effect transistor, which includes an epitaxial channel layer and adrain layer arranged in a stack on a bulk or SOI substrate. The gateoxide is thermally grown on the sides of the stack using differentialoxidation rates to minimize input capacitance problems. The gate wrapsaround one end of the stack, while contacts are formed on a second end.An etch-stop layer embedded in the second end of the stack enablescontact to be made directly to the channel layer.

U.S. Pat. No. 5,773,331 by Solomon et al. and entitled “Method forMaking Single and Double Gate Field Effect Transistors With SidewallSource-Drain Contacts” describes a method for making single-gate anddouble-gate field effect transistors having a sidewall drain contact.The channel of the FETs is raised with respect to the support structureunderneath and the source and drain regions form an integral part of thechannel.

U.S. Pat. No. 5,757,038 by Tiwari et al. and entitled “Self-Aligned DualGate MOSFET with an Ultranarrow Channel” is directed to a self-aligneddual gate FET with an ultra thin channel of substantially uniform widthformed by a self-aligned process. Selective etching or controlledoxidation is utilized between different materials to form a verticalchannel extending between source and drain regions, having a thicknessin the range from 2.5 nm to 100 nm.

U.S. Pat. No. 5,580,802 to Mayer et. al. and entitled“Silicon-on-Insulator Gate-All-Around MOSFET Fabrication Methods”describes an SOI gate-all-around (GAA) MOSFET which includes a source,channel and drain surrounded by a top gate, the latter of which also hasapplication for other buried structures and is formed on a bottom gatedielectric which is formed on source, channel and drain semiconductorlayers of an SOI wafer.

U.S. Pat. No. 5,308,999 to Gotou and entitled “MOS FET Having a ThinFilm SOI Structure” describes a MOS FET having a thin film SOI structurein which the breakdown voltage of an MIS (Metal Insulator Semiconductor)FET having an SOI structure is improved by forming the gate electrode onthe top surface and two side surfaces of a channel region of the SOIlayer and by partially extending the gate electrode toward the insideunder the bottom of the channel region such that the gate electrode isnot completely connected.

U.S. Pat. No. 5,689,127 to Chu et al. and entitled “Vertical Double-GateField Effect Transistor” describes a vertical double-gate FET thatincludes a source layer, an epitaxial channel layer and a drain layerarranged in a stack on a bulk or SOI substrate. The gate oxide isthermally grown on the sides of the stack using differential oxidationrates to minimize input capacitance problems. The gate wraps around oneend of the stack, while contacts are formed on a second end. Anetch-stop layer embedded in the second end of the stack enables contactto be made directly to the channel layer.

The lithographically defined gate is by far the simplest, but suffersfrom a number of disadvantages. First, definition of the gate may leavepoly spacers on the side of the diffusions or may drive a required slopeon the side of the diffusion, thereby resulting in a poorer qualityand/or more poorly controlled device. Second, the slope of the polyinherently leads to difficulty in forming silicided gates, leading toslower device performance. Finally, the poly step height poses adifficult problem for lithographic definition, as we expect steps on theorder of 100 nm-200 nm in a 50 nm design rule technology.

The key difficulties in fabricating double-gated FETs are achievingsilicidation of thin diffusions or polysilicon with acceptable contactresistance, enabling fabrication of the wraparound gate withoutmisalignment of the two gates, and fabrication of the narrow diffusions(ideally, 2-4 times smaller than the gate length).

Additional techniques for generating the dual-gated transistors includedefining the gate lithographically with high step heights (see U.S. Pat.No. 4,996,574 to Shirasaki, entitled “MIS Transistor StructureforIncreasing Conductance Between Source and Drain Regions”), forming aselective epitaxial growth which provides an “air-bridge” siliconstructure (see Hon-Sum Philip Wong, International Electron DevicesMeeting (IEDM) 1997, pg. 427), and forming wrap-around gates withvertical carrier transport (see H. Takato IEDM, 1988, pg. 222).

In summary, previous fabrication schemes have relied uponlitographically defined silicon channels and long, confined lateralepitaxial growth. However, a lithographically defined channel cannot beformed with sufficiently close tolerances and even available tolerancescannot be maintained adequately to support near-optimal dual gatetransistor performance in the above approaches. Further, techniquesusing lateral current flow with FET widths defined laterally suffer fromdifficulty in aligning the top and bottom gates even though thickness ofsilicon can be tightly controlled.

U.S. patent application Ser. No. 09/526,857, by James W. Adkisson, JohnA. Bracchitta, John J. Ellis-Monaghan, Jerome B. Lasky, Kirk D. Petersonand Jed H Rankin, filed on Mar. 16, 2000, and incorporated by referenceabove, entitled “Double Planar Gated SOI MOSFET Structure” describes amethod to create the double gate transistor, assuming the channel widthcan be made small enough.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a dualgate transistor having relatively thin epitaxially grown channels.

According to the invention, there is provided a method of forming afield effect transistor (FET) transistor, comprising the steps offorming silicon layers on a substrate. Next, epitaxial channels areformed on a side surface of the silicon layers, with one side wall ofthe channels therefore being exposed. The silicon layers are thenremoved, thereby exposing a second sidewall of the epitaxial channels.Source and drain regions are then formed, coupled to ends of theepitaxial channels. Finally, a gate is formed over the epitaxialchannels.

The invention thus seeks to provide a very thin diffusion region using aknown technique for growing epitaxial regions to form the very thinchannel and has the advantages of providing much tighter tolerances onchannel thickness than a lithographically defined channel which can bemaintained by selective etching and that epitaxial growth is notcomplicated by the presence of thin confining layers.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects and advantages will be betterunderstood from the following detailed description of a preferredembodiment of the invention with reference to the drawings, in which:

FIG. 1A is top view of the device showing a silicon line;

FIG. 1B is a cross sectional view of cut 1-1 shown in FIG. 1A;

FIG. 1C is a cross sectional view of cut 2-2 shown in FIG. 1A;

FIG. 2A shows the substrate of FIG. 1A after epitaxial growth of etchstop and channel layers;

FIG. 2B is a cross sectional view of cut 1-1 shown in FIG. 2A;

FIG. 2C is a cross sectional view of cut 2-2 shown in FIG. 2A;

FIG. 3A shows FIG. 2A with a mask opening for silicon line removal;

FIG. 3B shows a cross sectional view of cut 2-2 shown in FIG. 3A;

FIG. 4A shows FIG. 3A after the removal of any remaining portion of thesilicon line and the etch stop layer;

FIG. 4B shows a cross sectional view of the 2-2 cut shown in FIG. 4A;

FIG. 5 shows the device of FIG. 4A after the formation of a secondchannel;

FIG. 6 is a representational cross section of cut 2-2 shown in FIG. 5;

FIG. 7 shows the substrate of FIG. 6 after shallow trench isolation(STI) fill and polish;

FIG. 8A is a representational cross section of cut 2-2 shown in FIG.11B, after a polysilicon conductor (PC) resist mask is applied andetching;

FIG. 8B is a representational cross section of cut 2-2 shown in FIG.11B, after a PC resist mask is applied;

FIG. 9A shows the substrate of FIG. 8A after gate dielectric growth ordeposition, and gate conductor deposition;

FIG. 9B shows the substrate of FIG. 8B after removal of the PC resistmask;

FIG. 10A shows removal of STI and isolation implants in the substrate ofFIG. 9A;

FIG. 10B shows extension implants in the substrate of FIG. 9B;

FIG. 11A shows the completed device of FIG. 10A before contacts;

FIG. 11B shows a top view of the completed device, and

FIG. 12 illustrates a technique of removing defective material due toexcessive faceting.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT OF THE INVENTION

Referring now to FIG. 1A, there is shown a top view of a startingsilicon-on-insulator (SOI) substrate 100. As shown in FIGS. 1B and 1C,which correspond to sections 1-1 and 2-2 shown in FIG. 1A, respectively,the substrate 100 is comprised of a bulk substrate 106, a buried oxide(BOX) 108 layer, and an active layer 110. FIGS. 1B and 1C also show anoxide pad film 102 and a nitride pad film 104 on active layer 110. Thoseskilled in the art will realize that it may be preferable to have theoxide pad film 102 placed on top of the nitride pad film 104. The padoxide 102 is grown using standard oxidation techniques and wouldtypically be in the range of 3 to 14 nm, with 8 nm being preferred. Padfilms 104 are placed upon pad oxide 102. It is preferred that nitridefilms be utilized as pad films 104, although other materials may also beused. The nitride (upper) pad films 104 are typically in the range of 30to 120 nm, with 80 nm being preferred, and define the etch areas forshallow trench isolation (STI) formation.

The active device layer 110 is patterned to form edges 112 where thesilicon channel will be formed. The width 113 of active layer 110, whichis used to form what will become the channel region, is not critical,other than it must be wide enough for masking and narrow enough toconfine overetching, thereby providing an adequate, practicalmanufacturing tolerance. It is preferred that the silicon regions thatwill become the source 114 and drain 116 areas and contact areas 118,120 be formed during this stage in accordance with conventionalprocessing techniques known to those skilled in the art.

FIGS. 2A, 2B and 2C correspond to FIGS. 1A, 1B and 1C, respectively,after epitaxial growth of etch stop 202 and subsequent epitaxial growthof the channel 204. It is preferred that the etch stop be comprised ofSi(0.3)Ge (0.7), and that the epitaxially grown channel be comprised ofsilicon or alloys of silicon with germanium and/or carbon. Alloys ofsilicon with other Group IV elements (particularly germanium and carbon)can be used to optimize the FET performance by adding strain to thechannel and/or modifying the conduction and valence bands across thechannel to alter the device threshold or improve carrier transport. Itwill be evident to those skilled in the art that, prior to formation ofetch stop 202 and channel 204, a suitable cleaning process is used toremove a portion of the silicon 110 under the oxide pad film 104. Thewidth of the removed silicon should be approximately equal to thecombined width of the etch stop 202 and channel 204.

Non-selective epitaxial deposition of etch stop 202 and channel 204 maybe required if faceting is excessive, although selective deposition ispreferred. It is preferred that the thickness of layer 202 beapproximately 5 nm. Faceting will be highly dependent on details ofepitaxial growth. Particularly with selective epitaxial growth, facetingmay alter the thickness of the epitaxial regions as the edge of theopening is approached. Since the channel is projected to be very thinrelative to the height of the growth, the area where the channel will beimpacted is likely to be small. The allowed thickness beforedislocations are created is sensitive to the Ge fraction and decreasesquickly with increase in the Ge fraction (see A. Fischer and H. Kuhne,“Critical Dose for Strained Layer Configurations”, Phys. Stat. Sol. (a),155, 141, 1996). Then, channel 204 is epitaxially grown, preferably inthe range 5-50 nm.

The bottom and top of channel 204 may be defective. Particularly if theepitaxial layer is thin, the region is likely to be extremely small andmay not be significant to the formation of the device. However, if it isnecessary to remove these regions, two processes are available to do soat small but tolerable, degrade of device width control. Specifically, aspacer could be deposited similar to that of spacer 302 of FIG. 3B, butetched lower to uncover the top of the epitaxial region. After thisspacer is formed, the buried oxide is etched underneath the spacer asshown on the left side of FIG. 12. Alternatively, a thin compositespacer may be used. In this case, the bottom of the spacer areisotropically etched to uncover the top and bottom regions. The heightof the spacer (overetch) is determined by the undercut necessary toreach the epitaxial region at the bottom of the spacer, as shown on theright side of FIG. 12. After the defective regions are etched, thespacers are removed selectively to the epitaxial regions and the buriedoxide layer before proceeding to following processing steps. It shouldbe noted that it is also possible to perform the procedure describedabove after the spacer shown in FIG. 4B is removed with the spacers ofthe above described procedure being removed before further processing.

FIGS. 3A and 3B correspond to FIGS. 2A and 2C, respectively, afteradditional processing steps, as described below. As shown in FIG. 3B,spacers 302 are formed, using a suitable technique and material widelyknown to those skilled in the art, to protect the channel 204 againstattack.

Then, a mask is applied and positioned such that the mask opening 304,shown in FIG. 3A, provides for removal of the exposed portion of siliconlayer 110 and etch stop 202 within the mask opening 304. It is preferredthat the mask 304 be aligned as closely as possible to the channel 204.The exposed silicon 110 within mask opening 304 is then etched using ananisotropic etch.

The exposed silicon 110 within mask opening 304 is then etched. Sincenot all of the silicon 110 will be removed during this etch, the siliconlayer 110 is also etched laterally, stopping on etch stop 202 (see K. D.Hobart, F. J. Kub, M. E. Twigg, G. G. Jernigan, P. E. Thompson,“Ultra-Cut: A Simple Technique for the Fabrication of SOI Substrateswith Ultra-thin (<5 nm) Silicon Films”, Proc. IEEE International Siliconon Insulator (SOI) Conference, p 145-146, October 1988.) KOH can beutilized as an etchant, which has a selectivity of approximately 20:1for Si:Si(O.3)Ge(O.7), whereas NH₄OH is reported to have a selectivityof better than 100:1 for a 25% Ge film (see G. Wang et. al., “HighlySelective Chemical Etching of Si vs. Si(1-x)G(x) using NH40H solution,J. Electrochem. Soc., Vol. 144(3), March 1997, L37).

Thus, with an overlay of approximately 70 nm, and an edge tolerance ofapproximately 20 nm, the expected thickness required is approximately 85nm. Assuming a 20% overetch, a 100 nm etch will be required. The worstcase SiGe attack would then be approximately 5 nm when KOH is utilizedas the etchant, and approximately 1 nm with NH₄0H is utilized as theetchant.

Next, etch stop 202 is selectively etched to the channel 204. Theselectivity for HF:H₂O₂:CH₃COOH is approximately 1000:1 for a 70% Gefilm. Assuming a 10 nm etch, Si attack is therefore negligible. Theselectivity for HNO₃:H₂O:HF (40:20:5) is approximately 25:1 selectivityfor a 50% Ge film. The effective HF dilution is approximately 12:1.Oxide attack will be significant, but can be controlled in accordancewith conventional processing steps widely known to those skilled in theart. Etch rates for HNO₃:H₂0:HF are approximately 40 nm/min, suggestingvery short exposures, and probably allowing further dilution forcontrol. (see D. J. Godbey et. al., “Selective Removal of Si(1−x)Ge(x)from <100> Si using HNO₃ and HF, J. Electrochem. Soc., 139(10), 2943,1992). Spacers 302 can be removed, if necessary, in accordance withconventional processing steps widely known to those skilled in the art.

FIGS. 4A and 4B correspond to FIGS. 3A and 3B, respectively, after theetching of active layer 110 and etch stop 202. If necessary, a trim maskcan be applied to remove undesired fins 402 in accordance withconventional processing techniques widely known to those skilled in theart. FIG. 5 shows the device of FIG. 4A after the formation of a secondchannel 502 which, as will be readily recognized by those skilled in theart, can be formed by using the same processing steps as previouslydescribed for the first channel 204.

Having formed the first 204 and second 502 channel regions, a firstsequence of final processing steps required to complete the dual-gatedtransistor is described below.

Referring now to FIG. 6, channels 204 and 502 of FIG. 5 are shown, aswell as an additional channel 602 that may be used to form another gatestructure. It should thus be understood by those skilled in the art thatsubstrate 100 may comprise many channels in addition to shown channels204, 502 and 602. Here, the substrate 100 thus comprises bulk substrate102, BOX layer 104, and channels 204, 502 and 602.

Then, in FIG. 7, a standard STI fill 702 is provided, which ispreferably a silicon dioxide layer of approximately 300 to 500 nm thick.However, other suitable materials known to those skilled in the art mayalso be used as a sacrificial film. It is preferred that the STI surfacebe planarized by polishing.

FIG. 8A is a representational cross-sectional cut of section 1-1 of FIG.11B. FIG. 8A is representational because polysilicon conductor (PC)resist 802 and STI fill 702 are present during fabrication in FIG. 8A,but are not present in corresponding region 114 of FIG. 11B. Afterplacing the PC resist mask 802 on a selected regions of STI fill 702,STI fill 702 is selectively etched relative to pad films 104 and down tothe BOX layer 108. It is preferred, but not required, that the etch alsobe selective relative to the BOX layer 108. Pad films 104 are thenremoved selectively to the STI fill layer 702 and BOX layer 104. FIGS.9A and 10A show that the pad layers 104 could be left, if desired, toallow a thin gate dielectric 904 only on the sidewalls of channels 204,502 and 602. It is preferred that there be approximately a 10:1selectivity in each etch, which can be accomplished with known state ofthe art etches. If desired, well implants may optionally be introducedat this point. These implants would be done using highly angledimplants, preferably in the range of 10 to 45 degrees, with each implantrotated at approximately 90 degrees relative to each other in order tofully dope the sidewalls of the diffusion. In order to avoid doping thesurface layer of the diffusions more heavily than the sides, theimplantation could be done before removing the pad films 104 in theexposed areas of PC resist 802.

FIG. 8B is a representational cross-sectional cut of section 2-2 shownin FIG. 11B. FIG. 8B is representational because PC resist mask 802 andSTI fill 702 are present during fabrication in FIG. 8B, but are notshown in the region between the source 114, drain 116, and gate 902 inFIG. 11B. FIG. 8B thus shows the selective placement of PC mask 802during fabrication. This can be accomplished using standard patternlithography techniques using a PC mask preferably composed of eitherphotoresist or a hardmask.

FIG. 9A shows the substrate of FIG. 8A after gate dielectric growth 904(e.g., SiO₂), and gate conductor 902 deposition. It should be understoodthat nitrided oxides, nitride/oxide composites, metal oxides (e.g.,Al₂O₃, ZrSiO₄, TiO₂, Ta₂O₅, ZrO₂, etc.), perovskites (e.g., (Ba,Sr)TiO₃, La₂O₃) and combinations of the above can also be used as thedielectric. Gate dielectric growth on each channel 204, 502 and 602could be standard furnace or single-wafer chamber oxidations inaccordance with conventional methods. If desired, nitriding species(e.g., N₂O, NO or N₂ implantation) can be introduced prior to, during,or subsequent to oxidation. Gate dielectric deposition on each channel204, 502 and 602 can be accomplished, for example, through chemicalvapor deposition (CVD) or other techniques known to those skilled in theart.

After etching, the gate 902 is deposited. Gate conductor depositioncould be accomplished using conventional CVD or directional sputteringtechniques. It should be understood that gate conductors other thanpolysilicon can also be used. For example, an SiGe mixture, refractorymetals (e.g., W), metals (e.g., Ir, Al, Ru, Pt), and TiN can be used. Ingeneral, any material that can be polished and that has a highconductivity and reasonable workfunction can be used in place ofpolysilicon. After deposition, the gate 902 is polished in accordancewith conventional techniques.

FIG. 9B shows FIG. 8B after removal of the PC resist mask 802. The STIsurface 904 is cleaned in accordance with conventional techniques.

FIGS. 10A and 10B show extension implants to form the MOSFET device ofFIG. 9A after removal of STI fill 702. Implantations are done at a largeangle, preferably in the range of 7 to 45 degrees, relative to a vectorperpendicular to the wafer surface. Four implants, each rotated atapproximately 90 degrees relative to each other about the wafer surfacenormal vector in order to fully dope the sidewalls of the diffusionsuniformly. The pad oxide layer 102 on top of the diffusions may beutilized to avoid doping the surface of the diffusions too strongly. Inthis case, the pad films 104 would be removed after the implantation,but before the final implantations are done, which would follow thespacer 146 deposition.

FIG. 11A shows the device of FIG. 10A after formation of silicide layer1102 in accordance with conventional steps. Also in accordance withconventional steps, after the gate 902 is formed, spacers 1104 areformed and the diffusions are annealed, and a layer of highly conformaldielectric fill 1106 is deposited, and then polished to the top of thegate conductor. It is preferred that dielectric fill 1106 is a nitridelayer followed by a doped glass. Because of the high aspect ratios, fillproperties suggest a rapid-thermal CVD or a self-sputtering depositionusing a high-density plasma-enhanced CVD technique. Typically, thedielectric glass includes phosphorus and/or boron, but it can also beundoped.

FIG. 11B shows a top view of the completed device. The source 114 anddrain 116 region are formed by implantation. Contacts 1106, 1108, 1110are added and back end of line (BEOL) processing is done in accordancewith conventional steps.

Referring again to FIG. 8A, the second sequence comprises the steps ofremoving the pad oxide 102 and pad nitride 104 films. If necessary,disposable spacers can be formed and the top of the channels 204, 502and 602, if defective, can be etched. As shown in FIG. 9A, gate oxide isthen grown, and the gate 902 is deposited, preferably from among thesame materials described above, and etched to form gates.

While the invention has been described in terms of its preferredembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims.

1-13. (canceled)
 14. A method for forming a double gated field effect transistor (FET), comprising the steps of: forming on a substrate a first and a second epitaxially grown channels, said channels being grown horizontally from the vertical side surfaces of semiconductor regions, said regions extending up from the substrate and being centered between said channels, wherein said second channel is grown following removal of a first of said semiconductor regions; etching areas within a silicon layer to form a source and a drain, wherein a side surface of the source and the drain contact opposing end surfaces of the first and second epitaxially grown channels; and forming a gate that contacts a top surface and two side surfaces of the first and second epitaxially grown channels and a top surface of the substrate.
 15. The method as recited in claim 14, wherein the forming step comprises the steps of: forming said first and a second of said semiconductor regions, each end of the semiconductor regions contacting an end of the source and the drain; forming an etch stop layer on an exposed side surface of each of the first and second semiconductor regions; epitaxially growing said first and second semiconductor channels on each respective etch stop layer; etching away the first and second semiconductor regions and the etch stop layers; filling areas surrounding the first and second epitaxially grown semiconductor channels and between the source and the drain with an oxide fill; and etching a portion of the oxide fill to form an area that defines a gate, wherein the area that defines the gate is substantially centered between and substantially parallel to the source and the drain.
 16. The method as recited in claim 15, further comprising the steps of: etching the oxide fill between the gate the source to expose the first and second epitaxially grown silicon layers; and etching the oxide fill between the gate and the drain to expose the first and second epitaxially grown silicon layers.
 17. The method as recited in claim 16, further comprising the step of forming an oxide on the first and second epitaxially grown silicon layers.
 18. The method as recited in claim 17, wherein the oxide is silicon dioxide.
 19. The method as recited in claim 14, further comprising the steps of: implanting a portion of the epitaxially grown silicon layers between the gate and the source; and implanting a portion of the epitaxially grown silicon layers between the gate and the drain.
 20. The method as recited in claim 19, wherein the implanting step is in the range of 10 to 45 degrees relative to a vector perpendicular to a top surface of the epitaxially grown silicon layers.
 21. The method as recited in claim 20, wherein the implants are done in a series at approximately 90 degrees relative to each other.
 22. The method as recited in claim 14, further comprising the step of forming a contact on each of the gate, the source and the drain.
 23. The method as recited in claim 14, wherein the gate material is polysilicon. 